(b) increases. Optimum reverberation time for music is a) 0.5 to 1 sec b) 0 to 1 sec c) 1 to 2 sec d) above 5 sec. The electric current means a flow of charge. c. Propagation coefficient . d. Numerical coefficient . Abstract. Which one of the following has minimum absorption coefficient a) Glass b) felt c) open windows d) Wooden floor. Mobility expression for the electrons (μ n) and the holes (μ p), expressed in terms of Hall coefficient is given by, Where, σ n and σ p represent the conductivity due to the electrons and the holes, respectively. The carrier concentration in sample A at room temperature is: 2. Figure 1. 3. Log in. The hall coefficient is defined considering the applied field in Tesla and thickness of the specimen in Meter. (c) remain same. If the impurity content in metal alloy is increases, its president resistivity is (a) decreases. Hall Effect proved that electrons are the majority carriers in all the metals and n-type semiconductors. The Hall coefficient (or hall constant) is defined as the ratio of the induced electric field to the product of the current density and the applied magnetic field. Q6. 10 to 20 pieces, calculate the coefficient of price elasticity of supply. Moment of a magnet C. Magnetic susceptibility D Permittivity Magnetic susceptibility is the degree to which a material is magnetized by an external … MCQ on Photometry. The Hall effect. Question is ⇒ Measurement of hall coefficient enables the determination of, Options are ⇒ (A) mobility of charge carriers, (B) type of conductivity and concentration of charge carriers, (C) temperature coefficient and concentration of charge carriers, (D) fermi level and forbidden energy gap, (E) , Leave your comments or Download question paper. C 0.4000. Mainly Lorentz force is responsible for Hall effect.All of we know that when we place a current carrying conductor inside a magnetic field, the conductor experiences a mechanical force to a direction depending upon the direction of magnetic field and the direction of current in the conductor. The Hall Effect Principle has been named after an American physicist Edwin H. Hall (1855–1938). 5. Multiple Choice Questions and Answers By Sasmita January 9, 2020 Multiple Choice Questions and Answers on Semiconductor Theory In addition to reading the questions and answers on my site, I would suggest you to check the following, on amazon, as well: It was first introduced to the world by him in 1879.Fig. MCQ .1 . a) L mol-1 cm-1 b) L gm-1 cm-1 c) Cm d) No unit. D can be any units. Your email address will not be published. Hall effect, development of a transverse electric field in a solid material when it carries an electric current and is placed in a magnetic field that is perpendicular to the current. We have provided Thermal Properties of Matter Class 11 Physics MCQs Questions with Answers to help students understand the concept very well. The band gap of a conductor is given by, 12. MCQ .52 . The relation between drift velocity (vd) and current (I) is given by, 11. What is a diode? Q8. Hence, absorption has no unit. The difference between the electron and hole Fermi energies of a semiconductor laser is 1.5eV and the band gap of the semiconductor is 1.43eV. Which of the following metal has lowest temperature coefficient of resistance? If p0 is the concentration of holes and q is the magnitude of the charge on a hole, the Hall Coefficient is given by. (d) none of the above. It is a characteristic of the material from which the conductor is made, since its value depends on the type, number, and properties of the charge carriers that constitute the current. 3. Heat & Mass Transfer MCQ Questions Answers – Mechanical Engineering 1) Which of the following material has least thermal conductivity at room temperature ? A. Permeability B. The Table below gives the Hall coefficients of a number of metals and semiconductors at room temperature with number of electrons per unit volume. The best-fit equations and corresponding R2 values are Bismuth: VHall = −6.12× 10−8β +4.77× 10−7 R2 = 0.7949 Silver: VHall = −2.00× 10 −9β −7.04×10 7 R2 = 0.9665 The material is a) Insulator b) Metal c) Intrinsic semiconductor d) None of the above In beryllium, cadmium and tungsten, however, the coefficient is positive. Another best-fit line was found for each sample using least squares fitting. Multiple Choice Questions with Answers on Refrigeration and Air-Conditioning - Set 07. In this graph, it is seen that T MAX decreases with increasing doping. Question is ⇒ The measurement of Hall coefficient of a semiconductor with one type of charge carriers gives the information about, Options are ⇒ (A) sign of charge carrier, (B) density of charge carrier, (C) both sign and density of charge carrier, (D) none of the above, (E) … The material is (a) insulator (6) metal (c) intrinsic semiconductor (d) none of the above Ans: b. For a particular material the Hall coefficient was found to be zero. b. Attenuation coefficient . View Answer Answer: must also be in kilograms 26 In a regression analysis if SSE = 200 and SSR = 300 , then ... B 0.6000. The position of fermi level in n-type semiconductor, 8. In p-type semiconductors, holes are the majority carriers. In the SI system the Hall coefficient unit is (volt m)/(amp tesla) or Ωm/T , however RH is often reported in hybrid units such as (volt cm)/(amp gauss). If a charge q is moving along x axis and direction of magnetic filed is along y-axis then what will be direction of Lorentz force? A transmission unit used in a number of Northern European countries as an alternative to the decibel is _____. The indifference curve means: The Hall coefficient is defined as the ratio of the induced electric field to the product of the current density and the applied magnetic field. The ribbon carries a current of 100 A from left to right, and it lies in a uniform magnetic field of magnitude 1.5 T. 95. The Hall Effect voltage in intrinsic silicon is: The Hall coefficient of an intrinsic semiconductor is: Consider the following statements: pure germanium and pure silicon are examples of: Has an electric field directed along its length, The electron and hole concentrations in a intrinsic semiconductor are. Hall effect measurements The resistivity and the Hall coefficient of pure aluminum and Al with l at.% Si have been measured at 20 °C (293 K) as ρ = 2.65 μΩ cm, RH-_3.51 × 10-11 m3 Ci for Al and ρ = 3.33 μΩ cm. Solution: R H =-1/ne. The Hall coefficient of (A) at room temperature is 4×10, If the drift velocity of holes under a field gradient of 100v/m is 5m/s, the mobility (in the same SI units) is. The motivation for compiling this table is the existence of conflicting values in the " popular" literature in which tables of Hall coefficients are given. (b) Aluminium. (d) Kanthol. Multiple Choice Question (MCQ) of Electronics page-17:241. What is the Basic Logic Gate? Hall Effect • The Hall effect is the production of a voltage difference (the Hall voltage) across an electrical conductor, transverse to an electric current in the conductor and a magnetic field perpendicular to the current. This phenomenon was discovered in 1879 by the U.S. physicist Edwin Herbert Hall. Practice Test: Question Set - 07 1. For a particular material the Hall coefficient was found to be zero. This maximum seems to correspond very well to the metal insulator transition which was discussed in section 2.4.2. A hall 30 m long and 12 m wide is to be illuminated and the illumination required is 50 meter-candles. A. It was discovered by Edwin Hall in 1879. RH =ー for the pure metal and the alloy are 0.4049 nm and 0.4074 nm. Multiple Hall effects superposition may be realized by placing multiple voids within the Hall element, with current and voltage contacts on the boundary of each void. « Back CONTENTS Next » 1. R H = -1/5 x 10 28 x 1.6 x 10-19. Thus, the Hall coefficient is negative for n-type material. The upper and lower frequency limits of the laser will be respectively: The intrinsic carrier density at 300K is 1.5 x 10, A high concentration of acceptors below the contact, A high concentration of donors below the contact. The units of absorptivity, distance, and concentration cancel each other. D All of the above. One torr is equal to (a) 1 Nm – 2 (b) 1 mm of Hg (c) 1 atm pressure (d) 1 cm of Hg. The conductor have transport […] The Hall coefficient of sample (A) of a semiconductor is measured at room temperature. Engineering Books, Study Material, Tech Buzz, 2. Fermi-dirac distribution function is given by f(E) = 1 e(E−EF )/kT +1, At T > 0K and E = EF, which one will be correct, 4. Figure \(\PageIndex{2}\) shows a silver ribbon whose cross section is 1.0 cm by 0.20 cm. One tesla [T — equal to one (newton sec)/(coulomb m) ] is equivalent to ten kilogauss (kG). The basic unit used in photometry is the lumen. Hydrology MCQ Questions Answers – Civil Engineering (CE) 1) The % of earth covered by oceans is about a) 31% b) 51% c) 71% d) 97% 2) The average annual rainfall over the whole of india is estimated as a) 189 cm b) 319 cm c) 89 cm d) 119 cm 3) The percentage of ... Read more Hydrology MCQ Questions Answers Civil Engineering The dimensional formula of energy and torque respectively are (a) The order of band gap of insulator is, A silicon sample is uniformly doped with 10, Produced when Indium is added as an impurity to Germanium, Produced when phosphorous is added as an impurity to silicon. 94. If the temperature of an extrinsic semiconductor is increased so that the intrinsic carrier concentration is doubled, then: Both majority and minority carrier densities double, At room temperature, the current in an intrinsic semiconductor is due to, A small concentration of minority carriers is injected into a homogeneous semiconductor crystal at one point. If the energy gap of a semiconductor is 1.1 e V it would be: The conductivity of an intrinsic semiconductor is given by (symbols have the usual meanings): Consider the following statements: Compared to Silicon, Gallium Arsenide (GaAs) has: In an intrinsic semiconductor, the mobility of electrons in the conduction band is: Less than the mobility of holes in the valence band, Greater than the mobility of holes in the valence band, The Hall coefficient of sample (A) of a semiconductor is measured at room temperature. a. Attenuation ... Phase-shift coefficient . Table 1 Hall Coefficients and Number of electrons per unit volume of Materials Overview of Computer Aided Design (CAD) | Advantages | Co‐ordinate systems | drawing commands, Solved Numericals of Engineering Drawing – ED 22 Solved Questions, What is dimensioning? Measure Magnetic Flux Density This equation can be readily deduced from the equation of Hall voltage and is given by NEET Physics Mcq. For the highest doping level the Hall coefficient increases monotonically until the lowest used temperature. R H = … c) The hall should not have any absorbing material d) The Reverberation time has to be optimum. Explanation: The unit of absorptivity is L mol-1 cm-1. During that time, … 3. All units were converted to SI units. View Answer Answer: 0.6000 27 If the correlation coefficient is a positive value, then the slope of the regression line A must also be positive. The mobility is given by (notations have their usual meaning): Hall effect is observed in a specimen when it (metal or a semiconductor) is carrying current and is placed in a magnetic field. The conductivity of an extrinsic semiconductor with temperature (a) decreases (b) increases (c) remains constant Ans: c. 96. The resultant electric field inside the specimen will be in: A direction normal to both current and magnetic field, A direction anti parallel to magnetic field. Various dimensioning systems- Engineering Drawing, Working principle of Bell Coleman air refrigeration system, Kelvin‐Planck and Clausius statements of second law of thermodynamics, Different types of gears used for power transmission. c) The saturation voltage V CE for silicon transistor is same as that for germanium. In p-type semiconductors, holes are the majority carriers. The Hall coefficient of (A) at room temperature is 4×10 –4 m 3 coulomb –1. Hint: Look the ”Fleming Right Hand Palm Rule” for direction of Lorentz force, 6. Hall Coefficient Calculator. Similarly for p-type material, Using Equations (8.120) and , carrier concentration can be determined. The unit of RH is m3/Coulomb. The material is a) Insulator b) Metal c) Intrinsic semiconductor d) None of the above The Hall effect which is used to measure the carrier concentration in semiconductors can be applied in a Hall probe to measure the magnetic field. Modes of Heat Transfer- Conduction, Convection, Radiation Heat and Mass Transfer MCQ Objective Question and Answers Part 2 Heat and Mass Transfer MCQ Objective Question and Answers Part 3 Heat Transfer Analysis of Engine Cylinder Fins Having Triangular Shape Heat Transfer Online Notes , Objective and Interview Questions Thermodynamics Basic Objective Type Question And Answers … The charge carrier in a normal electric current, the electron, is negative, and as a result the Hall coefficient is negative. The position of Fermi level in intrinsic semiconductor, 9. Carrier concentration, Hall mobility, Hall coefficient, and sheet resistance values were obtained by four-point probe technique using Hall effect measurement system in a magnetic field strength of 0.556 T and these values were listed in Table 3. Calculate the number of lamps required taking a depreciation factor of 1.3 and utilization coefficient of 0.5 given that the output of the lamp to be used is … (or) E H = R H J x B _____ (8.119) where R H = Hall coeffi cient. 11. Problem 1: Find Hall coefficient for 5 x 10 28 atom / m 3 in copper block. Multiple Choice Questions (MCQ) on Electrical Engineering Materials for Electrical Engineering ... (d) none of the above . ¼. Equations (8.118) and are same so, we have: where ρ is charge density. For most metals, the Hall coefficient is negative, as expected if the charge carriers are electrons. Order of band gap in semiconductor is given by, 13. a) The saturation voltage V CF of silicon transistor is more than germanium transistor. The Hall coefficient has the same sign as the charge carrier. Electron volt is a unit of (a) Potential difference (b) Electric current (c) Electronic charge (d) Energy. Hall coefficient definition is - the quotient of the potential difference per unit width of metal strip in the Hall effect divided by the product of the magnetic intensity and the longitudinal current density. Fermi-dirac distribution function is given by f(E) = 1 e(E−EF )/kT +1, At T = 0K and for E > EF, which one will be correct, Ans. 1 – Photo of Edwin H. Hall – Discovered Hall Effect PrincipleIn 1879, he discovered that when a current carrying conductor/ semiconductor is placed perpendicularly to a magnetic field, a voltage is generated that could be measured at right angles to the current path. The position of fermi level in p-type semiconductor, 7. Measurement of Hall coefficient in a semiconductor provides information on the: Mass and concentration of charge carriers, Sign and concentration of charge carriers. (a) Electrons move to the left in this flat conductor (conventional current to the right). The effective mass of the electron is given by, 10. The Hall Potential in a Silver Ribbon. Q7. Check the below NCERT MCQ Questions for Class 11 Physics Chapter 11 Thermal Properties of Matter with Answers Pdf free download. Answer: a. 10. B. The Hall coefficient, R H, is in units of 10-4 cm 3 /C = 10-10 m 3 /C = 10-12 V.cm/A/Oe = 10-12. ohm.cm/G. 10. The Hall coefficient of sample (A) of a semiconductor is measured at room temperature. Describe the OR, AND, NAND gate with the help of the truth table. The probability that an electron in a metal occupies the Fermi-level, at any temperature (>0 K) is: Measurement of Hall coefficient enables the determination of: Type of conductivity and concentration of charge carriers, Temperature coefficient and thermal conductivity. What is the unit of molar absorptivity or absorptivity which is used to determine absorbance A in Beer Lambert’s formula? In this calculator, you can calculate the Hall coefficient of a free electrons in solid semiconductor with known values. 2. (a) Copper. The Hall coefficient is just the reciprocal of the total current-carrying charge in the conductor, and has the same sign as the sign of this charge. So if you take an intrinsic sample of silicon the coefficients for the electron and the hole will differ only by the sign. The Hall coefficient of (A) at room temperature is 4×10–4 m3 coulomb–1. The unit of energy in MKS system is (A) Volt (B) Erg (C) Ohm (D) Joule. ½; C. 1; D. 2. When the samples are highly overdoped, the R H (T) maximum does not exist. The range of regressioin coefficient is: The mobility (in cm. • The Hall coefficient is defined as the ratio of the induced electric field 4. The carrier concentration in sample A at room temperature is: The total utility coincides with the marginal utility: A. for the first unit consumed; B. only for the irrational consumer; C. at the level of the last unit consumed; D. at the saturation point. Correct Answer. Ans: c. 2. The Hall effect is the production of a voltage difference (the Hall voltage) across an electrical conductor, transverse to an electric current in the conductor and a magnetic field perpendicular to the current. The magnetic field is directly out of the page, represented by circled dots; it exerts a force on the moving charges, causing a voltage ε, the Hall emf, across the conductor. Following are a few important terms in photometry: Luminous Intensity – It is defined as the amount of luminous flux emitted by a source per unit solid angle Ω. C Hint:Fermi Dirac Distribution function is given by, 3. MCQ Questions for Class 11 Physics with Answers were prepared based on the latest exam pattern. If X is measured in yours and Y is measured in minutes, then correlation coefficient has the unit: (a) Hours (b) Minutes (c) Both (a) and (b) (d) No unit . DE Patent 4308375 The Hall coefficient is defined as the ratio of the induced electric field to the product of The hall coefficient is defined considering the applied field in Tesla and thickness of the specimen in Meter. An electric field of 10 V.cm is applied across the crystal and this moves the minority carriers a distance of 1 cm is 20 µsec. For a particular material the Hall coefficient was found to be zero. (c) Gold. Which of the following statement is true? b) The saturation voltage V CE for germanium transistor is more than silicon transistor. Hall Effect proved that electrons are the majority carriers in all the metals and n-type semiconductors. The Hall coefficient is dependant on the charge and the concentration of the carriers involved. What is the application of it? A process by which we estimate the value of dependent variable on the basis of one or more independent . 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